Radiation damage factor for ion-implanted silicon detectorsirradiated with heavy ions |
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| Authors: | Kurokawa M Motobayashi T Ieki K Shimoura S Murakami H Ikeda Y Moriya S Yanagisawa Y Nomura T |
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| Affiliation: | Dept. of Phys., Rikkyo Univ., Tokyo; |
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| Abstract: | Ion-implanted silicon detectors were irradiated with 18-150 MeV 16O, 20 MeV 40Ar, and 53 MeV 110Xe. A linear increase of the leakage current was observed as a function of the particle fluence up to 2.2×108 cm-2. Extracted damage factors are proportional to the averaged nuclear stopping power over five orders of magnitude covering heavy ions studied in the present work and also protons of 25-800 MeV energies |
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