|
|||||
|
|
Annealing before gate metal deposition related noise performance in AIGaN/GaN HEMTs |
|
| Authors: | Pang Lei Pu Yan Liu Xinyu Wang Liang Li Chengzhan Liu Jian Zheng Yingkui and Wei Ke |
| Affiliation: | Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China |
| Abstract: | GaN HEMT annealing before metal deposition gate leakage current noise performance |
| Keywords: | GaN HEMT annealing before metal deposition gate leakage current noise performance |
| 本文献已被 维普 万方数据 等数据库收录！ | |