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A comparison of the performance of irradiated p-in-n and n-in-n silicon microstrip detectors read out with fast binary electronics |
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| Authors: | P. P. Allport L. Andricek C. M. Buttar J. R. Carter M. J. Costa L. M. Drage T. Dubbs M. J. Goodrick A. Greenall J. C. Hill T. Jones G. Moorhead D. Morgan V. O'Shea P. W. Phillips C. Raine P. Riedler D. Robinson A. Saavedra H. F-W. Sadrozinski J. S nchez N. A. Smith S. Stapnes S. Terada Y. Unno |
| Affiliation: | a Oliver Lodge Laboratory, University of Liverpool, Liverpool, L69 3BX, UK b Max-Planck-Institut für Physik, Munich, Germany c Department of Physics, University of Sheffield, Sheffield, S3 7RH, UK d Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge, CB3 0HE, UK e IFIC, University of Valencia - CSIC, E-46100 Burjassot Valencia, Spain f SCIPP, University of California, Santa Cruz, CA, USA g Research Centre for High Energy Physics, University of Melbourne, Australia h Department of Physics and Astronomy, University of Glasgow, UK i Rutherford Appleton Laboratory, Chilton, Didcot, Oxon, OX11 0QX, UK j EP Division, CERN, CH-1211 Geneva 23, Switzerland k School of Physics, University of Sydney, Australia l University of Oslo, Oslo, Norway m KEK National Laboratory for High Energy Physics, Tsukuba 305-0801, Japan |
| Abstract: | Both n-strip on n-bulk and p-strip on n-bulk silicon microstrip detectors have been irradiated at the CERN PS to a fluence of 3×1014 pcm−2 and their post-irradiation performance compared using fast binary readout electronics. Results are presented for test beam measurements of the efficiency and resolution as a function of bias voltage made at the CERN SPS, and for noise measurements giving detector strip quality. The detectors come from four different manufacturers and were made as prototypes for the SemiConductor Tracker of the ATLAS experiment at the CERN LHC. |
| Keywords: | Irradiated Silicon Microstrip Detectors |
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