Growth and properties analysis of metal-organic chemical vapor deposited MgxZn1-xO films on C-Al2O3 substrates |
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| Authors: | Zengliang SHI Dali LIU Xiaolong YAN Zhongmin GAO Shiying BAI |
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| Affiliation: | (1) State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China;(2) Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, National Analytical Research Center of Electrochemistry and Spectroscopy, Changchun, 130022, China |
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| Abstract: | MgxZn1−xO (0 〈 x ⩽ 0.12) thin films with the wurtzite structure have been successfully grown on c-Al2O3 substrates by metal-organic chemical vapor deposition (MOCVD). X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), photoluminescence (PL) spectrometry, and transmission measurements are performed to study the characteristics of Mg x Zn1−x O thin films. Results show that with increasing Mg content, the diffraction peak of Mg x Zn1−x O thin films shifts towards a higher diffraction angle (the biggest shift is 0.22°), and the full width at half maximum (FWHM) of the diffraction peak is broadened. Meanwhile, a blue-shift occurs at the near-band-edge (NBE) emission peak and the largest blue-shift of the band gap of the Mg x Zn1−x O films is 113 meV with Mg content x50.12. Therefore, the energy band gap of the Mg x Zn1−x O films is determined by Mg content in the thin films and the energy band gap increases with an increase of Mg content. |
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| Keywords: | Mg x Zn1− x O metal-organic chemical vapor deposition X-ray diffraction blue-shift |
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