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Analytical subthreshold current modeling of nanoscale ultra-thin body ultra-thin box SOI MOSFETs with a vertical gaussian doping profile |
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| Authors: | Wei Sufen Zhang Guohe Huang Huixiang Liu Jing Shao Zhibiao Geng Li Yang Cheng-Fu |
| Affiliation: | 1.School of Microelectronics, Xi’an Jiaotong University, Xi’an, Shaanxi, 710049, China ;2.Department of Chemical and Materials Engineering, National University of Kaohsiung, No. 700, Kaohsiung University Rd., Nan-Tzu District, Kaohsiung, 811, Taiwan ;3.School of Information and Engineering, Jimei University, Fujian, 361021, China ; |
| Abstract: | Microsystem Technologies - Based on the evanescent-mode analysis, an insightful study of the channel potential is performed for the nanoscale ultra-thin body ultra-thin box SOI MOSFETs with a... |
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