Technology and electric characteristics of the field-effect hall sensor based on SOI structure

Dependences of electric characteristics on the technological parameters of the field-effect Hall sensors based on SOI structures (FEHS-SOI) are discussed. The manufacturing process for the formation of a magnetosensitive structure comprising the field-effect Hall sensor based on a MOSFET in the SOI structures was simulated. Electrical characteristics of the device were calculated and the optimization research devoted to the influence of process parameters on the FEHS-SOI voltage-current characteristics and sensitivity was made.