Measurement of I-V curves of silicon-on-insulator (SOI) MOSFET'swithout self-heating |
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| Authors: | Jenkins K.A. Sun J.Y.-C. |
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| Affiliation: | IBM Thomas J. Watson Res. Center, Yorktown Heights, NY; |
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| Abstract: | A new method for measuring the output (ID-VD) characteristics of SOI MOSFET's without self-heating is described. The method uses short pulses with a low repetition rate, and a reverse transient loadline construction. The technique is demonstrated by measuring 0.25 μm bulk and SOI MOSFET's with 5-nm gate oxide. Application of the method to the extraction of device temperature as a function of DC power is also illustrated |
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