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Carbon nanotubes field emission integrated triode amplifier array
Authors:Y.M. Wong   W.P. Kang   J.L. Davidson  J.H. Huang
Affiliation:aDepartment of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN 37235, USA;bDepartment of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan, ROC
Abstract:Because the high frequency operation of a field emission triode amplifier is dictated by the cutoff frequency and not the electron transit time, a high ratio of transconductance, gm to the overlapping interelectrode capacitance, Cg is the desired outcome. Consequently, to achieve high frequency performance of the CNT amplifier array in this study, Cg was reduced by performing a dual-mask photolithography process to minimize the overlapping gate area, and, the insulating layer's thickness was increased. Moreover, wedge-shaped CNT emitter arrays are employed to increase emission sites, resulting in return higher gm. Both dc and ac performance of the amplifier were characterized. The triode amplifier array exhibited a high current of not, vert, similar 0.32 mA (74 mA/cm2), gm of not, vert, similar 63 μS and voltage gain of not, vert, similar 18 dB. Frequency response of the triode amplifier up to 20 kHz was also investigated. A theoretical cutoff frequency of > 70 MHz could be achieved with proper shielding of the test setup.
Keywords:Amplifier   Carbon nanotubes   Field emission   MPCVD   Triode
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