周期性梯度富硅SiNx薄膜的微结构与发光特性

采用磁控共溅射结合快速光热退火技术在单晶硅和石英衬底上制备了含硅量子点的周期性梯度富硅SiN_x薄膜(梯度薄膜)和单层富硅SiN_x薄膜(单层薄膜)。采用Raman光谱、掠入射X射线衍射(GIXRD)、透射电子显微镜(TEM)、傅里叶变换红外(FTIR)光谱和光致发光(PL)光谱分析了薄膜的结构特性、键合特性和发光特性。Raman光谱、GIXRD和TEM结果表明, 梯度薄膜和单层薄膜中的硅量子点晶化率分别为41.7%和39.2%; 梯度薄膜的硅量子点密度是单层薄膜的5.4倍。FTIR光谱结果显示两种薄膜均为富硅氮化硅薄膜, 梯度薄膜的硅含量小于单层薄膜。PL光谱结果表明梯度薄膜中的辐射复合缺陷少于单层薄膜。

Microstructure and Luminous Property of Periodical Gradient Si-rich SiNx Thin Films

Periodic gradient Si-rich SiN_x (G-SRSN) thin films and single-layer Si-rich SiN_x (S-SRSN) thin films were deposited on monocrystalline silicon wafers and quartz substrates by combination of magnetron co-sputtering and rapid photo-thermal annealing. Raman spectroscope, grazing incident X-ray diffraction (GIXRD), transmission electron microscope (TEM), Fourier transform infrared (FTIR) spectroscope and photoluminescence (PL) were used to analyze the structure, bonding configurations and luminescence of the films. Raman, GIXRD and TEM results show that the crystalline fractions of G-SRSN and S-SRSN thin films are 41.7% and 39.2%, respectively. Quantum dots density of G-SRSN thin film is 4.4 times higher than that of S-SRSN thin film. The FTIR spectra demonstrate that both G-SRSN and S-SRSN films are Si-rich SiN_x, but Si content of the former is lower than that of the later. PL spectra suggest that the G-SRSN thin films possess a lower radiative recombination defect density than the G-SRSN thin films.