Effects of annealing in an oxygen ambient on electrical properties of ohmic contacts to p-type GaN |
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Authors: | Yasuo Koide T. Maeda T. Kawakami S. Fujita T. Uemura N. Shibata Masanori Murakami |
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Affiliation: | (1) Department of Materials Science and Engineering, Kyoto University, 606-8501 Sakyo-ku, Kyoto, Japan;(2) Technical Department of Optelectronics, Toyoda Gosei Co., Ltd., Haruhi-cho, Nishikasugai-gun, 452 Aichi, Japan;(3) Department of Materials Science and Engineering, Kyoto University, 606-8501 Sakyo-ku, Kyoto, Japan |
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Abstract: | Effects of annealing ambient of an oxygen and nitrogen mixed gas on the electrical properties were studied for Au-based ohmic contacts (NiAu, CoAu, CuAu, PdAu, and PtAu) to p-type GaN. Addition of oxygen to the nitrogen gas reduced the specific contact resistances (ρc) and resitivities of the p-GaN epilayers (ρs) of the contacts after annealing at temperatures of 500–600°C. The microstructural analysis at the p-GaN/metal interfaces did not detect the heterostructural intermediate semiconductor layer at the GaN/metal interfaces. The reason for reduction of both the ρc and ρs values by the oxygen gas addition was believed to be due to formation of the p-GaN epilayer with high hole concentrations, caused by removal of hydrogen atoms which bonded with Mg atoms. |
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Keywords: | Annealing contact resistance contact ohmic p-GaN |
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