| 直流反应磁控溅射沉积CuInS2薄膜的结构与电学性质 |
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| 引用本文： | 颜畅,刘芳洋,赖延清,李轶,李劼,刘业翔. 直流反应磁控溅射沉积CuInS2薄膜的结构与电学性质[J]. 无机材料学报, 2011, 0(12): 1287-1292 |
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| 作者姓名： | 颜畅 刘芳洋 赖延清 李轶 李劼 刘业翔 |
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| 作者单位： | 中南大学冶金科学与工程学院; |
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| 基金项目： | 博士点基金新教师项目(200805331121); 湖南省自然科学基金(09JJ3110)~~ |
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| 摘 要： | 采用直流反应磁控溅射技术在玻璃基底上制备了太阳电池用CuInS2薄膜.以X射线能量色散谱仪、扫描电镜、X射线衍射仪、冷热探针和霍尔效应测试系统对薄膜进行了表征.结果表明,薄膜成分可通过调整Cu靶和In靶的功率比PCu/PIn来进行调控;而薄膜形貌则取决于靶功率比和薄膜的成分.随着PCu/PIn的增大,薄膜物相由富铟相向CuInS2转变.对于CuInS2薄膜,提高铜铟原子比[Cu]/[In]可改善薄膜的结晶质量.但当薄膜富铜时,过高的[Cu]/[In]又会导致薄膜结晶质量的下降.当CuInS2薄膜为富铜与略微贫铜时,其导电类型为P型;且载流子浓度随[Cu]/[In]增加而增大,并远高于其它贫铜薄膜.CuInS2薄膜的载流子迁移率明显高于富铟相薄膜;且随着[Cu]/[In]的提高,CuInS2薄膜的载流子迁移率呈上升趋势,而电阻率则迅速下降.
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| 关 键 词： | 反应磁控溅射 铜铟硫 太阳能电池 电学性质 薄膜 |
Structure and Electrical Property of CuInS_2 Thin Films Deposited by DC Reactive Magnetron Sputtering |
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| YAN Chang,LIU Fang-Yang,LAI Yan-Qing,LI Yi,LI Jie,LIU Ye-Xiang. Structure and Electrical Property of CuInS_2 Thin Films Deposited by DC Reactive Magnetron Sputtering[J]. Journal of Inorganic Materials, 2011, 0(12): 1287-1292 |
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| Authors: | YAN Chang LIU Fang-Yang LAI Yan-Qing LI Yi LI Jie LIU Ye-Xiang |
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| Affiliation: | YAN Chang,LIU Fang-Yang,LAI Yan-Qing,LI Yi,LI Jie,LIU Ye-Xiang(School of Metallurgical Science and Engineering,Central South University,Changsha 410083,China) |
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| Abstract: | CuInS2 thin films for solar cells were prepared on the glass substrate by DC reactive magnetron sputtering technique.Produced films were characterized by EDS,SEM,XRD,hot point probe and Hall electrical measurement.The results suggest that the composition of the films are determined and controlled by the power ratio of copper target and indium target,while the morphology of thin films depends on the composition of thin films and target power ratio.As the atomic ratio [Cu]/[In] increases,the film phases trans... |
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| Keywords: | reactive magnetron sputtering CuInS2 solar cell electrical property thin film |
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