| 石墨烯外延生长及其器件应用研究进展 |
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| 引用本文： | 王霖,田林海,尉国栋,高凤梅,郑金桔,杨为佑.石墨烯外延生长及其器件应用研究进展[J].无机材料学报,2011,26(10):1009-1019. |
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| 作者姓名： | 王霖 田林海 尉国栋 高凤梅 郑金桔 杨为佑 |
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| 作者单位： | (1. 太原理工大学 表面工程研究所, 太原 030024; 2. 宁波工程学院 材料工程研究所, 宁波 315016) |
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| 基金项目： | 国家自然科学基金(50872058,51002083); 浙江省杰出青年科学基金(R4100242)~~ |
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| 摘 要： | 石墨烯具有优异的物理和电学性能, 已成为物理和半导体电子研究领域的国际前沿和热点之一. 本文简单介绍了石墨烯的物理及电学特性, 详细评述了在众多制备方法中最有希望实现石墨烯大面积、高质量的外延生长技术, 系统论述了不同SiC和金属衬底外延生长石墨烯的研究进展, 并简要概述了石墨烯在场效应晶体管、发光二极管、超级电容器及锂离子电池等光电器件方面的最新研究进展. 外延生长法已经初步实现了从纳米、微米、厘米量级石墨烯的成功制备, 同时可实现其厚度从单层、双层到少数层的调控, 有望成为高质量、与传统电子工艺兼容、低成本、大面积的石墨烯宏量制备技术, 为其器件应用奠定基础.
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| 关 键 词： | 石墨烯 外延生长 器件 进展 综述 |
| 收稿时间： | 2011-01-15 |
| 修稿时间： | 2011-04-06 |
Epitaxial Growth of Graphene and Their Applications in Devices |
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| WANG Lin,TIAN Lin-Hai,WEI Guo-Dong,GAO Feng-Mei,ZHENG Jin-Ju,YANG Wei-You.Epitaxial Growth of Graphene and Their Applications in Devices[J].Journal of Inorganic Materials,2011,26(10):1009-1019. |
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| Authors: | WANG Lin TIAN Lin-Hai WEI Guo-Dong GAO Feng-Mei ZHENG Jin-Ju YANG Wei-You |
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| Affiliation: | (1. Research Institute of Surface Engineering, Taiyuan University of Technology, Taiyuan 030024, China; 2. Institute of Materials Engineering, Ningbo University of Technology, Ningbo 315016, China) |
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| Abstract: | Due to its outstanding physical and electrical properties,graphene has become one of the hot research topics and frontiers in the fields of physics and semiconductor electronics.The physical and electrical properties of graphene were briefly introduced.A comprehensive review was presented to the current research activities concen-trated on the epitaxial growth of graphene which could be the most promising strategy among the reported methods to meet the challenge for mass production of graphene with high qua... |
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| Keywords: | graphene epitaxial growth devices progress review |
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