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氧等离子体辅助脉冲激光沉积法制备PMN-PT薄膜的微观结构和电学性能
引用本文:何邕,李效民,高相东,冷雪,王炜.氧等离子体辅助脉冲激光沉积法制备PMN-PT薄膜的微观结构和电学性能[J].无机材料学报,2011,26(11):1227-1232.
作者姓名:何邕  李效民  高相东  冷雪  王炜
作者单位:(1. 中国科学院 上海硅酸盐研究所, 高性能陶瓷和超微结构国家重点实验室, 上海200050; 2. 中国科学院 研究生院, 北京100049)
基金项目:National Basic Research Program of China(973 Program)(2009CB623304); National Natural Science Foundation of China(11090332)
摘    要:采用氧等离子体辅助脉冲激光沉积方法(PLD)在硅衬底上, 制备出高度(001)取向的钙钛矿相结构钛铌镁酸铅(PMN-PT)薄膜. 研究了氧等离子体辅助对PMN-PT薄膜相结构、微观形貌和电学性能的影响. 结果表明, 通过在薄膜沉积过程中引入高活性的氧等离子, 可以有效地提高PMN-PT薄膜的结晶质量和微观结构. 未采用氧等离子体辅助PLD方法制备PMN-PT薄膜的介电常数(10 kHz)和剩余极化(2Pr)分别为1484和18 μC/cm2, 通过采用氧等离子体辅助, 其介电常数和剩余极化分别提高至3012和38 μC/cm2.

关 键 词:脉冲激光沉积法  PMN-PT薄膜  微观结构  电学性能  
收稿时间:2011-05-17
修稿时间:2011-06-13

Microstructure and Electrical Properties of PMN-PT Thin Films Prepared by Oxygen Plasma Assisted Pulsed Laser Deposition
HE Yong,LI Xiao-Min,GAO Xiang-Dong,LENG Xue,WANG Wei.Microstructure and Electrical Properties of PMN-PT Thin Films Prepared by Oxygen Plasma Assisted Pulsed Laser Deposition[J].Journal of Inorganic Materials,2011,26(11):1227-1232.
Authors:HE Yong    LI Xiao-Min  GAO Xiang-Dong  LENG Xue  WANG Wei
Affiliation:(1. State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China; 2. Graduate University of the Chinese Academy of Sciences, Beijing 100049, China)
Abstract:Lead magnesium niobate-lead titanate(PMN-PT) ferroelectric thin films with composition near the morphotropic phase boundary(MPB) were deposited on Si substrate by oxygen plasma assisted pulsed laser deposition (PLD).Highly(001)-oriented PMN-PT thin films with lower oxygen defect and higher crystalline property were obtained.The results show that the microstructure and electrical properties of PMN-PT thin films strongly depend on the partial pressure and the activity of oxygen in the deposition process.With ...
Keywords:pulse laser deposition  PMN-PT thin films  microstructure  electrical properties  
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