A GeSi-buffer structure for growth of high-quality GaAs epitaxial layers on a Si substrate |
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Authors: | Edward Y Chang Tsung-Hsi Yang Guangli Luo Chun-Yen Chang |
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Affiliation: | (1) Department of Materials Science and Engineering, National Chiao Tung University, Taiwan 30050, Republic of China;(2) Microelectronics and Information Systems Research Center, National Chiao Tung University, Republic of China |
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Abstract: | A SiGe-buffer structure for growth of high-quality GaAs layers on a Si (100) substrate is proposed. For the growth of this
SiGe-buffer structure, a 0.8-μm Si0.1 Ge0.9 layer was first grown. Because of the large mismatch between this layer and the Si substrate, many dislocations formed near
the interface and in the low part of the Si0.1Ge0.9 layer. A 0.8-μm Si0.05Ge0.95 layer and a 1-μm top Ge layer were subsequently grown. The strained Si0.05Ge0.95/Si0.1Ge0.9 and Ge/Si0.05Ge0.95 interfaces formed can bend and terminate the upward-propagated dislocations very effectively. An in-situ annealing process
is also performed for each individual layer. Finally, a 1–3-μm GaAs film was grown by metal-organic chemical vapor deposition
(MOCVD) at 600°C. The experimental results show that the dislocation density in the top Ge and GaAs layers can be greatly
reduced, and the surface was kept very smooth after growth, while the total thickness of the structure was only 5.1 μm (2.6-μm
SiGe-buffer structure +2.5-μm GaAs layer). |
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Keywords: | SiGe GaAs on Si heterostructure dislocation ultrahigh-vacuum chemical vapor deposition (UHV/CVD) metal-organic chemical vapor deposition (MOCVD) |
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