Pulsed GaAs f.e.t. operation for high peak output powers

Significant increases in GaAs f.e.t. X-band power output are made possible by pulsed operation, using pulse durations sufficiently short that thermal limitations are alleviated. Significantly higher-voltage operation is also possible under these conditions, with further improvement in power output and gain. As much as 5.9 W of peak power output has been obtained at 8 GHz from a device capable of 2.5 W c.w. output at 6 GHz.