Molecular beam epitaxy growth of high-quality arsenic-doped HgCdTe |
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Authors: | D Edwall E Piquette J Ellsworth J Arias C H Swartz L Bai R P Tompkins N C Giles T H Myers M Berding |
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Affiliation: | (1) Rockwell Scientific Company, LLC, 93012 Camarillo, CA;(2) Physics Department, West Virginia University, 26506 Morgantown, WV;(3) SRI International, 94025 Menlo Park, CA |
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Abstract: | We have initiated a joint effort to better elucidate the fundamental mechanisms underlying As-doping in molecular beam epitaxy
(MBE)-grown HgCdTe. We have greatly increased the As incorporation rate by using an As cracker cell. With a cracker temperature
of 700°C, As incorporation as high as 4×1020 cm−3 has been achieved by using an As-reservoir temperature of only 175°C. This allows the growth of highly doped layers with
high quality as measured by low dislocation density. Annealing experiments show higher As-activation efficiency with higher
anneal temperatures for longer time and higher Hg overpressures. Data are presented for layers with a wide range of doping
levels and for layer composition from 0.2 to 0.6. |
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Keywords: | Molecular beam epitaxy (MBE) HgCdTe As doping activation anneal |
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