Al0.25In0.75P/Al0.48In0.52As/Ga0.35In 0.65As graded channelpseudomorphic HEMT's with high channel-breakdown voltage |
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| Authors: | Chough KB Caneau C Hong W-P Song J-I |
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| Affiliation: | Bellcore, Red Bank, NJ; |
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| Abstract: | A new Al0.25In0.75P/Al0.48In0.52 As/Ga0.35In 0.65As pseudomorphic HEMT where the InAs mole fraction of the Ga1-xInxAs channel was graded (x=0.53→0.65→0.53) is described. The modification of the quantum well channel significantly improved breakdown characteristics. In addition, use of an Al0.25In0.75P Schottky layer increased the Schottky barrier height. Devices having 0.5 μm gate-length showed gm of 520 mS/mm and Imax of 700 mA/mm. The gate-drain (BVg-d) and source-drain (BVd-s ) breakdown voltages were as high as -14 and 13 V, respectively. An fT of 70 GHz and fmax of 90 GHz were obtained |
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