40 GHz 7.9 mW low-power frequency divider IC using self-alignedselective-epitaxial-growth SiGe HBTs |
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Authors: | Hayami R Washio K |
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Affiliation: | Central Res. Lab., Hitachi Ltd., Kokubunji; |
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Abstract: | A low-power current-mode-logic frequency divider integrated circuit (IC) that operated at 40 GHz with a power consumption of 7.9 mW per master-slave flip-flop was fabricated using 0.2 μm self-aligned selective-epitaxial-growth SiGe heterojunction bipolar transistors. This IC also operated at 35 GHz from a supply voltage of -2.2 V. To the authors' knowledge this IC consumes the least power of any for operation in the millimetre-waveband that have appeared to date |
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