| 掺杂Dy~(3+)对SrTiO_3晶界层电容器组织性能的影响 |
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| 引用本文： | 陈显明,黄勇. 掺杂Dy~(3+)对SrTiO_3晶界层电容器组织性能的影响[J]. 兵器材料科学与工程, 2009, 32(4): 47-49 |
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| 作者姓名： | 陈显明 黄勇 |
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| 作者单位： | 肇庆学院,电子信息与机电工程学院,广东,肇庆,526061;肇庆学院,电子信息与机电工程学院,广东,肇庆,526061 |
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| 摘 要： | 研究掺杂Dy3+对SrTiO3晶界层电容器组织性能的影响。Dy3+的加入,在含量较低时可以降低晶粒的界面能,从而可以促进晶粒的长大;而在含量较高时,会引起较高的形变能,为降低形变能,Dy3+易于在晶界上析出第二相质点,这些第二相质点具有细化晶粒的作用。晶界层电容器的有效相对介电常数是由晶粒的大小、晶界层的介电常数和晶界层厚度所决定的。因此,瓷料的配方和制造工艺必须保证晶粒的生长和形成致密均匀的晶界,才有良好的性能。通过配方的调整,瓷片获得了良好的组织与综合性能:ε=68 000,tgδ=1.86×10-2,ρ50v=20 GΩ.cm,VB(DC)=620 V.mm-1,|△C.C-1(-25～+125℃)|=7.4%。
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| 关 键 词： | SrTiO_3 晶界层电容器 组织性能 Dy 陶瓷 |
Effect of Dy~(3+)-doping on the properties and microstructure of the SrTiO_3 grain boundary layer capacitors |
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| CHEN Xianming,HUANG Yong. Effect of Dy~(3+)-doping on the properties and microstructure of the SrTiO_3 grain boundary layer capacitors[J]. Ordnance Material Science and Engineering, 2009, 32(4): 47-49 |
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| Authors: | CHEN Xianming HUANG Yong |
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| Affiliation: | College of Electronic and Information & Mechanical Engineering;Zhaoqing University;Zhaoqing 526061;China |
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| Abstract: | This article studied the effect of Dy3+-doping on the properties and microstructure of the SrTiO3 grain boundary layer semiconductor ceramic capacitors(GBLC).Dy3+ adding can reduce the boundary energy and then promote the grain growth when the content of Dy3+ is lower.But when the content of Dy3+ is higher,the distorted energy is high,and to reduce these energy the second particles of Dy3+ is easy to precipitate on the boundary.These particles can refine the GBLC grain.The GBLC dielectric properties are det... |
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| Keywords: | SrTiO_3 Dy SrTiO_3 grain boundary layer semiconductor ceramic capacitors (GBLC) microstructure and properties Dy ceramic |
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