| 制造硅光电探测器的锂扩散和漂移技术 |
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| 引用本文： | 孙承松.制造硅光电探测器的锂扩散和漂移技术[J].沈阳工业大学学报,1991,13(3):93-96. |
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| 作者姓名： | 孙承松 |
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| 作者单位： | 沈阳工业大学电子工程系 |
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| 摘 要： | 本文介绍了制造硅光电探测器的锂扩散和漂移技术,这种探测器是为接受1.06μm波长的光而设计的,由于锂的特殊性质不能采取常规的扩散技术,而是在真空镀膜机中进行,漂移是在恒温箱中加一定电压来完成。经过漂移可使探测器的峰值响应波长移向1.06μm。本文也从理论上计算了漂移补偿区的厚度,与实验值基本符合。
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| 关 键 词： | 硅 光电探测器 锂 扩散 漂移 |
Diffusion and drift technology of lithium in fabrication of silicon photodetector |
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| Sun Chengsong.Diffusion and drift technology of lithium in fabrication of silicon photodetector[J].Journal of Shenyang University of Technology,1991,13(3):93-96. |
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| Authors: | Sun Chengsong |
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| Abstract: | Inthis paper the lithium drifted principle and lithium drifted technology for making silicon photodetector are described . The distribution of impurities and crest value of response curve are compared before and after lithium drifting. The rifted distance deviation between theory and measure is analysed. |
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| Keywords: | silicon optical detectors lithium diffusion drift |
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