| GaAs/AlGaAs量子阱的输运特性 |
| |
| 引用本文： | 王杏华,郑厚植.GaAs/AlGaAs量子阱的输运特性[J].半导体学报,1990,11(10):727-732. |
| |
| 作者姓名： | 王杏华 郑厚植 |
| |
| 作者单位： | 半导体超晶格国家实验室，中国科学院半导体研究所 北京 |
| |
| 摘 要： | 本文研究了低迁移率GaAs/AlGaAs量子阱的散射机制。由电导测量和Shubnikov de-Haas振荡曲线分别得到输运散射时间τ_0和弛豫时间τ_q(量子散射时间)。在GaAs/AlGaAs量子阱中,τ_0≈τ_q;而在调制掺杂的异质结中,τ_0》τ_q。用量子阱、异质结中起支配作用的散射机构不同很好地解释了实验结果。本文还研究了弱磁场下量子阱的负磁阻效应,这是磁场抑制了电子局域态的结果。
|
| 关 键 词： | GaAs／AlGaAs 量子阱 运输特性 |
Transport Properties of GaAs/AlGaAs Quantum Well |
| |
| Wang Xinghua/National Laboratory for Superlattice and Related Microstructures and Institute of Semiconductors,Academia Sinica,P. O. Box ,Beijing,China
Zheng Houzhi/National Laboratory for Superlattice and Related Microstructures and Institute of Semiconductors,Academia Sinica,P. O. Box ,Beijing,China.Transport Properties of GaAs/AlGaAs Quantum Well[J].Chinese Journal of Semiconductors,1990,11(10):727-732. |
| |
| Authors: | Wang Xinghua/National Laboratory for Superlattice and Related Microstructures and Institute of Semiconductors Academia Sinica P O Box Beijing China
Zheng Houzhi/National Laboratory for Superlattice and Related Microstructures and Institute of Semiconductors Academia Sinica P O Box Beijing China |
| |
| Affiliation: | Wang Xinghua/National Laboratory for Superlattice and Related Microstructures and Institute of Semiconductors,Academia Sinica,P. O. Box 912,Beijing,China
Zheng Houzhi/National Laboratory for Superlattice and Related Microstructures and Institute of Semiconductors,Academia Sinica,P. O. Box 912,Beijing,China |
| |
| Abstract: | |
| |
| Keywords: | Transport properties GaAs/AlGaAs Quantum well |
| 本文献已被 CNKI 维普 等数据库收录！ |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
|
