| 多孔钨铯离子源 |
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| 引用本文： | 赵守珍, 周清, 姜永丰. 多孔钨铯离子源[J]. 电子与信息学报, 1990, 12(4): 446-448. |
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| 作者姓名： | 赵守珍 周清 姜永丰 |
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| 作者单位： | 南开大学 天津(赵守珍，周清)，天津师范大学 天津(姜永丰) |
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| 摘 要： | 在光电阴极的制备及对光电阴极作表面分析中,铯离子源较中性铯源具有一定的优点。根据表面电离的原理,铯离子源使用了多孔钨、铯盐及其还原剂。本文介绍了铯离子源的制备,报告了实际测量结果。
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| 关 键 词： | 铯离子源 表面电离 多孔钨 离子电流 |
| 收稿时间： | 1988-07-25 |
| 修稿时间： | 1900-01-01 |
A POROUS TUNGSTEN CESIUM ION SOURCE |
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| Zhao Shouzhen, Zhou Qing, Jiang Yongfeng. A POROUS TUNGSTEN CESIUM ION SOURCE[J]. Journal of Electronics & Information Technology, 1990, 12(4): 446-448. |
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| Authors: | Zhao Shouzhen Zhou Qing Jiang Yongfeng |
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| Affiliation: | Nankai University Tianjin; Tianjin Normal University Tianjin |
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| Abstract: | In the surface analysis and the manufacture of photocathode the cesium ion source shows some advantages as compared with the neutral cesium source. According to the principle of surface ionization, a cesium ion source is manufactured with porous tungsten and cesium chromate. A tablet of porous tungsten and a nickel tube are welded by a laser beam. The ion source is heated to about 1000K io terms of an indirect heating oven and its experimental results are given. |
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| Keywords: | Cesium ion source Surface ionization Porous tungsten Ion current |
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