| 低电荷态类硅离子能级的解析计算 |
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| 引用本文： | 陈展斌. 低电荷态类硅离子能级的解析计算[J]. 湖南工业大学学报, 2019, 33(5): 84-91 |
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| 作者姓名： | 陈展斌 |
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| 作者单位： | 湖南工业大学 理学院 |
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| 基金项目： | 国家自然科学基金资助项目（11504421） |
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| 摘 要： | 基于多电子精细结构哈密顿和不可约张量理论,在考虑电子间交换相互作用以及内外壳层电子的不同屏蔽效应的基础上,推导了中性硅原子和低电荷态类硅离子Z=14～17能级的非相对论和相对论修正项的解析表达式;分析了各相对论修正的贡献。所得结果与实验测量结果之间吻合程度较高。
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| 关 键 词： | 硅原子；相对论；能量；解析式；变分法 |
| 收稿时间： | 2018-12-05 |
An Analytical Calculation of the Energy Levels of Lowly-Charged Silicon-Like Ions |
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| CHEN Zhanbin. An Analytical Calculation of the Energy Levels of Lowly-Charged Silicon-Like Ions[J]. Journal of Hnnnan University of Technology, 2019, 33(5): 84-91 |
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| Authors: | CHEN Zhanbin |
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| Abstract: | Based on the poly-electron fine structure Hamiltonian and irreducible tensor theory, and considering the exchange interaction between electrons and the different shielding effects of inner and outer shell electrons, a successful derivation can be achieved of the analytical expressions of non-relativistic and relativistic corrections for neutral silicon atoms and lowly-charged silicon-like ions Z=14~17 levels, followed by an analysis of the contributions of various relativistic corrections, which results are in good agreement with the experimental measurements. |
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