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Chemical and electrical characteristics of low temperature plasma enhanced CVD silicon oxide films using Si2H6 and N2O |
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| Authors: | Juho Song G. S. Lee P. K. Ajmera |
| Affiliation: | Solid State Laboratory, Department of Electrical and Computer Engineering, Louisiana State University, Baton Rouge, LA 70803, USA |
| Abstract: | Silicon oxide films have been deposited at low temperatures in the range of 30–250 °C using Si2H6 and N2O by conventional plasma enhanced chemical vapor deposition technique. The dependencies of deposition temperatures on the film properties are studied. The leakage current and the etch rate of these low temperature films compare favorably to films deposited by silane and TEOS at higher temperatures, respectively. |
| Keywords: | Chemical vapor deposition Dielectric properties Plasma processing and deposition Silicon oxide |
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