Thermal fatigue of Ag flake sintering die-attachment for Si/SiC power devices

Emerging SiC power semiconductor devices are expected to work under the high temperature condition of 250–300 °C while the operation of Si devices is limited up to 180 °C. The die-bonding materials for emerging SiC power devices hence need to have sufficient capability in such extreme operating environments. In this study, we investigated the thermomechanical reliability of the die-attach technology using Ag flake paste, which can be processed by low-temperature and low-pressure sintering. The Ag flakes start to sinter immediately after the organic dispersant layer is removed from the flake surface at 160 °C, and die-bonding consequently becomes possible. The tested Si die-attachments joining with the paste maintained high strength (23 MPa) up to 1,000 thermal cycles from ?40 to 180 °C. The stable microstructures without crack and no interfacial debonding assure the reliability of the Ag flake paste die-attach of Si. SiC die-attachments also maintained their high strength (24 MPa) up to 1,000 cycles of ?40 and 250 °C, though a slight degradation appeared after 1,000 cycles. The debondings at the sintered Ag flake paste layer/SiC wafer interface were affected to the joining strength with the Ag flake paste. The obtained results indicate that our Ag flake paste die-attach can be applied to both Si and SiC power devices capable of high temperature operations.