Wet Etching Study of La0.67(Sr0.5Ca0.5)0.33MnO3 Films on Silicon Substrates |
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| Authors: | Joo-Hyung Kim Alexander M. Grishin Velislava Angelova Ignatova |
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| Affiliation: | (1) Fraunhofer Institute, Center of Nanoelectronic Technologies (CNT), Koenigsbrueker Str 180, 01309 Dresden, Germany;(2) Department of Microelectronics and Information Technology, Royal Institute of Technology (KTH), 164 40 Stockholm-Kista, Sweden |
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| Abstract: | Wet etching of colossal magnetoresistive (CMR) perovskite La0.67(Sr0.5Ca0.5)0.33MnO3 (LSCMO) films on Bi4Ti3O12/CeO2/yttrium-stabilized zirconia (YSZ)-buffered Si substrates was investigated using potassium hydroxide (KOH) and buffered hydrofluoric acid (BHF) solutions. X-ray diffraction (XRD) and scanning spreading resistance microscopy (SSRM) measurements revealed that the morphological roughness of the LSCMO films increases, while the electrical resistance roughness decreases, with increasing KOH etching time. The LSCMO films are highly chemically resistant to KOH solution; however, in the case of BHF etching, an etch rate of 22 nm/min was obtained with high selectivity over a photoresist mask. |
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| Keywords: | Etch rate manganite selectivity KOH BHF SSRM |
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