Structural Changes of Porous Silicon Surface with Thermal Annealing Studied by 29Si Nuclear Magnetic Resonance Spectroscopy and Fourier Transform Infrared Spectroscopy |
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Authors: | Takashi Tsuboi Tetsuo Sakka Yukio H. Ogata Shizuo Naito |
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Affiliation: | (1) Institute of Advanced Energy, Kyoto University, Uji, Kyoto, 611-0011, Japan |
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Abstract: | 29Si nuclear magnetic resonance (NMR) spectra and infrared spectra were measured for as-prepared and annealed porous silicon (PS) samples to characterize the change of PS structure. Annealing changed the infrared spectra remarkably: after 4-h annealing, the signals due to SiH2 disappeared and the intensity of the signals due to SiH decreased. On the other hand, the 29Si NMR spectra with magic-angle spinning (MAS) were not much affected by the annealing. The linewidth of spectra without MAS, however, increased with annealing time with the peak location unchanged. Annealing caused hydrogen on the PS surface to be desorbed, especially in the case of SiH2 species, and (SiH)2 dimer structure was produced during the annealing. |
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Keywords: | porous silicon thermal annealing nuclear magnetic resonance spectroscopy infrared spectroscopy |
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