| GaAs/AlGaAs量子阱微结构的电学性质(英文) |
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| 引用本文： | 周洁,韩志勇,卢励吾,朱龙德. GaAs/AlGaAs量子阱微结构的电学性质(英文)[J]. 固体电子学研究与进展, 1989, 0(4) |
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| 作者姓名： | 周洁 韩志勇 卢励吾 朱龙德 |
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| 作者单位： | 中国科学院半导体研究所(周洁,韩志勇,卢励吾),中国科学院半导体研究所(朱龙德) |
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| 摘 要： |
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Electrical Properties of GaAs/AIGaAs Quantum Well Microstructures |
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| Abstract: | A novel manifestation of super-lattice properties in GaAs/AlGaAs quantum well photodiode structure grown by MOCVD was observed. When a sample was illuminated, the C-V profiles at different temperature showed an oscillation of charge conccntration.It was explained in terms of quantum well behaving as "giant trap". The mechanism of transport at different temperature was discussed. We also gave a comparison of interface of hete-rojuncion GaAs/AlGaAs and the trap-like effect of quantum well. The deep level of "giant trap" of quantum well was measured by DLTS. Detailed balance between emission and capture of free carriers in quantum well was deduced. |
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