2.36 /spl mu/m diode pumped VCSEL operating at room temperature in continuous wave with circular TEM/sub 00/ output beam |
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| Authors: | Cerutti L Garnache A Ouvrard A Garcia M Cerda E Genty F |
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| Affiliation: | Univ. of Montpellier, France; |
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| Abstract: | Operation of a diode-pumped AlGaAsSb/GaInAsSb type-I quantum-well vertical cavity surface emitting laser emitting near 2.36 /spl mu/m is reported. The epitaxial structure, grown on GaSb by molecular beam epitaxy consists of a GaSb/AlAsSb Bragg reflector and a GaInAsSb/AlGaAsSb active region. A circular TEM/sub 00/ low-divergence laser operation is demonstrated in continuous-wave mode operation from 268 up to 308K. A threshold of 5.5 kW/cm/sup 2/ at 268K has been measured. |
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