30°C CW operation of 1.52 μm InGaAsP/AlGaAs vertical cavitylasers with in situ built-in lateral current confinement by localisedfusion |
| |
| Authors: | Syrbu AV Iakovlev VP Berseth C-A Dehaese O Rudra A Kapon E Jacquet J Boucart J Stark C Gaborit F Sagnes I Harmand JC Raj R |
| |
| Affiliation: | Fed. Inst. of Technol., Lausanne; |
| |
| Abstract: | 1.52 μm double fused InGaAsP/AlGaAs vertical cavity surface emitting lasers with in situ built-in lateral current confinement were fabricated using a localised wafer fusion process. A threshold current of 2.5 mA at 4 V was obtained for devices with a 10×10 μm2 current aperture. These devices operate CW up to 30°C. The width of the dominant mode is less than 0.1 nm and the sidemode suppression ratio is 30 dB |
| |
| Keywords: | |
|
