The charge accumulation in an insulator and the states at interfaces of silicon-on-insulator structures as a result of irradiation with electrons and gamma-ray photons |
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Authors: | D V Nikolaev I V Antonova O V Naumova V P Popov S A Smagulova |
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Affiliation: | (1) Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090, Russia |
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Abstract: | The accumulation of charge in an insulator and the states at interfaces in silicon-on-insulator structures irradiated with 2.5-MeV electrons and 662-keV gamma-ray photons were studied. It was found that an additional positive charge appears in the buried insulator of the structures as a result of irradiation. The concentration of hole traps generated by radiation in the oxide is higher at the boundary with substrate than at the bonding interface between a split-off silicon layer and oxide. It is shown that the presence of even a weak built-in field in the structures (F?5×103 V/cm) gives rise to efficient separation of charge carriers. There is no generation of additional states at the Si/SiO2 interfaces in the silicon-on-insulator structures for both irradiation types, although this generation is observed in the initial thermal oxide. |
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