A new architecture for the NVRAM-an EEPROM backed-up dynamic RAM |
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| Authors: | Terada Y Kobayashi K Nakayama T Arima H Yoshihara T |
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| Affiliation: | Mitsubishi Electr. Corp., Itami; |
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| Abstract: | An architecture for a nonvolatile RAM (NVRAM) suitable for high-density applications is described. In the cell, a dynamic RAM cell is merged into an EEPROM cell. A capacitor is constructed between the control gate and the drain diffusion layer of the FLOTOX-type EEPROM memory cell. The equivalent circuit in the dynamic RAM mode consists of two transistors and a capacitor, which eliminates a dummy cell. A dynamic RAM sense amplifier is used in both modes, and it works as a data latch when data are transferred between the dynamic RAM and the EEPROM. The process of the NVRAM is compatible with ordinary EEPROMs |
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