Quarter-micron gate length microwave high electron mobility transistor |
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| Authors: | Chao P.C. Yu T. Smith P.M. Wanuga S. Hwang J.C.M. Perkins W.H. Lee H. Eastman L.F. Wolf E.D. |
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| Affiliation: | General Electric Company, Electronics Laboratory, Syracuse, USA; |
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| Abstract: | Quarter-micron gate length high electron mobility transistors have been fabricated using an electron-beam direct-writing technique. A maximum stable gain of 10 dB at 18 GHz has been measured at room temperature. A room-temperature cutoff frequency fT as high as 45 GHz has also been obtained. |
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