[001]织构和非织构CVD金刚石膜的电学特性

研究了「００１」织构和非织构金刚石膜的暗电流－电压特性、电流－温度特性以及在稳定Ｘ射线辐照下的响应。结果表明「００１」织构的金刚石膜相对非织构多晶金刚石膜具有大的暗电流和Ｘ射线响应。主要由于非织构金刚石膜含有大量的晶粒间界，导致对载流子的传输产生强烈散射。在高于５００Ｋ的温度区域内，随着温度的上升「００１」织构和非强构的金刚石膜的电流都将以指数式上升，这与Ｓｉ占据金刚石格点产生１．６８ｅＶ的激活能有关。

Electrical Properties of [001] Textured and Non-Texture d CVD Diamond Films

In this paper,electrical properties of X-ra y detectors using [001] textured and non-textured CVD diamond films were characterized and investigated. Results indicated that dark current s and photocurrents by X-ray irradiation for the [001] textured CVD diamond film were greater than those for the non-textured one. The differences in dark currents and resistivities were attributed to a l arge number of grain boundaries contained in the non-textured diamond films. From the I-T curves, at the temperature higher than 500K, currents clearly followed an exponential behavior because of the activ ation energy of Ea=1.68eV which was normally attributed to Si tr apped to a vacancy in the diamond lattice.