| Efficiency analysis of a-SiC:H thin film light emitting diodes |
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| 作者单位： | Dept.of Physics，Ningbo University，Ningbo 315211，Zhejiang，CHN |
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| 摘 要： | Ｅｆｆｉｃｉｅｎｃｙａｎａｌｙｓｉｓｏｆａ－ＳｉＣ：ＨｔｈｉｎｆｉｌｍｌｉｇｈｔｅｍｉｔｔｉｎｇｄｉｏｄｅｓＺＨＯＵＹａｘｕｎ（Ｄｅｐｔ．ｏｆＰｈｙｓｉｃｓ，ＮｉｎｇｂｏＵｎｉｖｅｒｓｉｔｙ，Ｎｉｎｇｂｏ３１５２１１，Ｚｈｅｊｉａｎｇ，ＣＨＮ）Ａｂｓ...
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Efficiency analysis of a-SiC:H thin film light emitting diodes |
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| Authors: | ZHOU Yaxun |
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| Abstract: | The hole injection,the radiative recombination and the device luminescent efficiencies of amorphous silicon carbide thin film p-i-n junction light emitting diodes are quantitatively calculated,and the effect of the carrier(especially the hole) injection and recombination processes on the device luminescent characteristics are revealed.Without considering the device junction temperature,it is found that the device luminescent efficiency mainly depends on the hole injection efficiency at low field and the hole radiative recombination efficiency at high field respectively.The theoretical analyses are in well agreement with the experimental results. |
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| Keywords: | Amorphous Semiconductors Thin Film Devices Light Emitting Diodes Luminescent Efficiency Injection Efficiency Radiative Recombination Efficiency |
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