Semiconductor lasers fabricated by selective area epitaxy |
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Authors: | Wang YL Temkin H Hamm RA Yadvish RD Ritter D Harriott LH Panish MB |
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Affiliation: | AT&T Bell Lab., Murray Hill, NJ, USA; |
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Abstract: | For the first time, semiconductor lasers grown entirely by selective area epitaxy are reported. The lasers were formed by in situ processing techniques and metal organic molecular beam epitaxy (MOMBE). A 50 AA thick layer of Si deposited on the InP substrate was used as a mask for both the selective growth and etching. Laser stripes, 6 mu m wide, were delineated by a focused Ga ion beam and transferred into the substrate by Cl/sub 2/ etching. These steps were performed in the vacuum chambers attached to the MBE machine. Separate confinement heterostructure GaInAsP-InP lasers were grown selectively in the stripes. The resulting devices emit at 1.3 mu m and show threshold currents of 40 mA.<> |
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