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Parallel arrays of Schottky barrier nanowire field effect transistors: Nanoscopic effects for macroscopic current output |
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| Authors: | Sebastian Pregl Walter M Weber Daijiro Nozaki Jens Kunstmann Larysa Baraban Joerg Opitz Thomas Mikolajick Gianaurelio Cuniberti | |
| Affiliation: | 1315. Institute for Materials Science and Max Bergmann Center of Biomaterials, TU Dresden, Dresden, 01062, Germany 2315. NaMLab GmbH, Dresden, 01187, Germany 3315. Fraunhofer Institute IZFP Dresden, Dresden, 01109, Germany 4315. Institute for Semiconductors and Microsystems Technology, TU Dresden, Dresden, 01187, Germany 5315. Division of IT Convergence Engineering, POSTECH, Pohang, Korea |
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| Abstract: | We present novel Schottky barrier field effect transistors consisting of a parallel array of bottom-up grown silicon nanowires that are able to deliver high current outputs. Axial silicidation of the nanowires is used to create defined Schottky junctions leading to on/off current ratios of up to 106. The device concept leverages the unique transport properties of nanoscale junctions to boost device performance for macroscopic applications. Using parallel arrays, on-currents of over 500 μA at a source-drain voltage of 0.5 V can be achieved. The transconductance is thus increased significantly while maintaining the transfer characteristics of single nanowire devices. By incorporating several hundred nanowires into the parallel array, the yield of functioning transistors is dramatically increased and deviceto-device variability is reduced compared to single devices. This new nanowirebased platform provides sufficient current output to be employed as a transducer for biosensors or a driving stage for organic light-emitting diodes (LEDs), while the bottom-up nature of the fabrication procedure means it can provide building blocks for novel printable electronic devices.  | |
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