| TFSOI RESURF器件电势和电场分布的解析研究 |
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| 引用本文： | 李文宏,罗晋生.TFSOI RESURF器件电势和电场分布的解析研究[J].微电子学,1999,29(6):432-436. |
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| 作者姓名： | 李文宏 罗晋生 |
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| 作者单位： | 西安交通大学,微电子学研究所,陕西西安,710049 |
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| 摘 要： | 在物理模型的基础上，对ＴＦＳＯＩ ＲＥＳＵＲＦ器件的电势和电场分布进行了解析分析，系统研究了漂移区掺杂浓度，漂移区长度，埋层ＳｉＯ２厚度和ＳＯＩ层厚度等结构参数同电势和电场分布的关系，并首次定量分析了在工艺加工过程中必须引入的场ＳｉＯ２界面电荷密度的影响。解析计算结果同ＭＥＤＩＣＩ模拟结果相符。
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| 关 键 词： | SOI RESURF器件 解析模型 电势 电场 |
An Investigation Into Potential and Electric Field Distributions of TFSOI RE SURF Devices |
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| LI Wen-hong,LUO Jin-sheng.An Investigation Into Potential and Electric Field Distributions of TFSOI RE SURF Devices[J].Microelectronics,1999,29(6):432-436. |
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| Authors: | LI Wen-hong LUO Jin-sheng |
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| Abstract: | Based on physical models,distribution of the potential and electric field of the TFSOI RESURF structure is studied Relations between potential and electric field distributions and device parameters are analyzed using this model Furthermore,effects of the interface charge density of the field SiO 2 induced in the process are taken into consideration The analytical results agree with the simulations of MEDICI |
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| Keywords: | SOI RESURF device Analytical model |
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