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Profiling Mobility Components near the Heterointerfaces of Thin Silicon Films |
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| Authors: | Zaitseva E. G. Naumova O. V. Fomin B. I. |
| Affiliation: | 1.Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, Russia ; |
| Abstract: | Semiconductors - A method for profiling the components of effective carrier mobility μeff determined by scattering at surface phonons and the roughness of thin film/dielectric interfaces is... |
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