Tunnel Diodes Based on n+-Ge/p+-Si(001) Epitaxial Structures Grown by the Hot-Wire Chemical Vapor Deposition |
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| Authors: | Shengurov V. G. Filatov D. O. Denisov S. A. Chalkov V. Yu. Alyabina N. A. Zaitsev A. V. |
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| Affiliation: | 1.Lobachevsky State University of Nizhny Novgorod, 603950, Nizhny Novgorod, Russia
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| Abstract: | Semiconductors - n+-Ge/p+-Si(001) epitaxial structures are grown by hot-wire chemical vapor deposition from GeH4 at a low substrate temperature (~325°C). Prototype tunnel diodes allowing for... |
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