Electrical and Photoluminescence Studies of {LT-GaAs/GaAs:Si} Superlattices Grown by MBE on (100)- and (111)A-Oriented GaAs Substrates |
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| Authors: | Galiev G. B. Klimov E. A. Klochkov A. N. Kopylov V. B. Pushkarev S. S. |
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| Affiliation: | 1.Mokerov Institute of Ultrahigh-Frequency Semiconductor Electronics, Russian Academy of Sciences, 117105, Moscow, Russia
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| Abstract: | Semiconductors - The results of studying semiconductor structures proposed for the first time and grown, which combine the properties of LT-GaAs with p-type conductivity upon doping with Si, are... |
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