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Investigation into the Distribution of Built-in Electric Fields in LED Heterostructures with Multiple GaN/InGaN Quantum Wells by Electroreflectance Spectroscopy
Authors:Aslanyan  A. E.  Avakyants  L. P.  Bokov  P. Yu.  Chervyakov  A. V.
Affiliation:1.Moscow State University, Faculty of Physics, General Physics Department, 119991, Moscow, Russia
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Abstract:Semiconductors - Electric-field nonuniformity in the active region of a LED (light-emitting diode) heterostructure based on five identical GaN/InGaN quantum wells is investigated by the...
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