1.Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, Russia ;2.Novosibirsk State University, 630090, Novosibirsk, Russia ;
Abstract:
Semiconductors - Composites consisting of Ge nanoclusters embedded in GeO2 matrix were modified by selective removal of the germanium dioxide in deionized water or HF. Thin (up to 200 nm) and thick...