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Computational and Experimental Simulation of Static Memory Cells of Submicron Microcircuits under the Effect of Neutron Fluxes |
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| Authors: | Puzanov A. S. Venediktov M. M. Obolenskiy S. V. Kozlov V. A. |
| Affiliation: | 1.Lobachevsky State University of Nizhny Novgorod, 603950, Nizhny Novgorod, Russia ;2.Branch of the Russian Federal Nuclear Center All-Russian Research Institute “Sedakov Scientific Research Instituteof Measurement Systems”, 603950, Nizhny Novgorod, Russia ;3.Institute for Physics of Microstructures, Russian Academy of Sciences, 603087, Nizhny Novgorod, Russia ; |
| Abstract: | Semiconductors - The simulation of reversible single events in test samples of static memory microcircuits with design norms of 0.5, 0.35, 0.25, and 0.1 μm under the effect of neutron fluxes... |
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