Electrical and memory properties of Si3N4 MIS structures with embedded Si nanocrystals |
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| Authors: | Horváth Z J Basa P Jászi T Pap A E Dobos L Pécz B Tóth L Szöllosi P Nagy K |
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| Affiliation: | Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science, Budapest 114, P.O. Box 49, H-1525, Hungary. |
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| Abstract: | Memory structures with an embedded sheet of separated Si nanocrystals were prepared by low pressure chemical vapour deposition using a Si3N4 control layer and different Si2O2 or Si3N4 tunnel layers. It was obtained that Si nanocrystals improve the charging behaviour of the MNOS structures. Memory window width of 1.3 V and 2.0 V were obtained for pulse amplitudes of +/-9 V and +/-10 V, 100 ms, respectively. The extrapolated memory window after 10 years is about 15% of its initial value. |
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