| 金属剥离与衬底腐蚀等平面自对准OHR技术研究 |
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| 引用本文： | 闫桂珍,张大成,李婷,王颖. 金属剥离与衬底腐蚀等平面自对准OHR技术研究[J]. 微纳电子技术, 2002, 39(1): 40-43 |
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| 作者姓名： | 闫桂珍 张大成 李婷 王颖 |
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| 作者单位： | 北京大学微电子学研究所,北京100871 |
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| 基金项目： | 国家科技部973项目(G19990331)支持 |
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| 摘 要： | 开发了一套OHR(OverhangResist)技术。在原来剥离工艺的基础上,增加苯处理和高温烘烤工艺,使光刻胶掩膜既保持有利于剥离的形状,腐蚀时又不发生钻蚀,完成自对准腐蚀与等平面的金属剥离。这一技术可以广泛地应用于MEMS和集成电路加工工艺中,使器件工艺简化,降低成本,提高质量。
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| 关 键 词： | 金属剥离 衬底腐蚀 氯苯浸泡 自对准 |
| 文章编号： | 1671-4776(2002)01-0040-04 |
| 修稿时间： | 2001-10-10 |
Self-aligned OHR technology for metal lift-off and substrate etching |
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| YAN Gui-zhen,ZHANG Da-cheng,LI Ting,WANG Ying. Self-aligned OHR technology for metal lift-off and substrate etching[J]. Micronanoelectronic Technology, 2002, 39(1): 40-43 |
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| Authors: | YAN Gui-zhen ZHANG Da-cheng LI Ting WANG Ying |
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| Abstract: | An overhang resist technology has thus been developed to solve the challenge.High temperature baking and chlorobenzene treatment are added in the standard lift-off process.The purposes not only retain the resist geometry,but also protect the lateral etching.This technology can simplify the process,make lift-off effective with low cost,and could be extensively applied to current MEMS and IC fabrication. |
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| Keywords: | lift-off substrate etching chlorobenzene treatment self-alignment MEMS Device&Technology |
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