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高倍聚光下三结砷化镓电池输出特性实验研究
引用本文:李定昌,黄金,林伟杰,谢泽扬. 高倍聚光下三结砷化镓电池输出特性实验研究[J]. 广东工业大学学报, 2015, 32(4): 25-29. DOI: 10.3969/j.issn.1007-7162.2015.04.005
作者姓名:李定昌  黄金  林伟杰  谢泽扬
作者单位:广东工业大学 材料与能源学院,广东 广州 510006
基金项目:广东省高等院校学科建设专项资金资助项目(2012KJCX0041);广州市应用基础研究专项(2013J4100010);广东省学位与研究生教育改革研究项目(2013JGXM MS20)
摘    要:目前对高倍聚光系统下砷化镓电池性能的实验研究主要是基于室内模拟光源条件下进行的,对室外条件下的研究相对较少.设计并搭建了一小型菲涅尔聚光光伏系统,介绍了系统结构及其工作原理,并对其进行了室外实验研究.实验结果表明:当菲涅尔聚光光伏系统几何聚光比为500,13:00太阳辐射强度达到峰值948 W/m2时,聚光后单片电池的短路电流放大253倍,开路电压增加了0.34 V,电池背板温度为86.6 ℃,短路电流此时达到峰值,开路电压由于芯片温度升高影响并未达到峰值,峰值出现在10:30时,峰值为2.85 V,比太阳辐射强度达到峰值时的开路电压增加了0.03 V,此时电池背板温度为74.4 ℃.

关 键 词:聚光; 三结砷化镓电池; 短路电流; 开路电压  
收稿时间:2014-06-20

Experimental Study of Output Characteristics of Triple-junction GaAs Cells under High-powered Concentrator
LI Ding-Chang,HUANG Jin,LIN Wei-Jie,XIE Ze-Yang. Experimental Study of Output Characteristics of Triple-junction GaAs Cells under High-powered Concentrator[J]. Journal of Guangdong University of Technology, 2015, 32(4): 25-29. DOI: 10.3969/j.issn.1007-7162.2015.04.005
Authors:LI Ding-Chang  HUANG Jin  LIN Wei-Jie  XIE Ze-Yang
Affiliation:School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, China
Abstract:Presently the researches on performance of GaAs solar cell using high concentrators have mainly been conducted under the condition of indoor simulating light source. However, there are few studies conducted in outdoor conditions. In this article, a small-scale Fresnel concentrating system is designed and built for experiment. Then, the system’s compositions as well as operating principles are introduced. According to the result, the geometric concentrating ratio is 500 and the radiation peak value reaches 948 W/m2 at 13:00. The value of short-circuit current of a single solar cell is magnified to 253 times by using the concentrator while the value of open-circuit voltage increases by 0.34 V and the temperature of the solar cell’s back is 86.6 ℃. When short circuit gets the peak value, open-circuit voltage can not reach the peak value for the increase of chip’s temperature. The peak value occurs at 10:30 am and its value is 2.85 V. The open-circuit voltage has 0.03 V more than the value of radiation at peak. In this case, the temperature of the solar cell’s back reaches 74.4 ℃.
Keywords:concentrator; triple-junction GaAs cell; short-circuit current; open-circuit voltage  
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