大规模集成电路用高纯铜及铜合金靶材研究与应用现状

随着大规模集成电路制程向高密集度的方向发展,器件的特征尺寸不断缩小,集成度越来越高。在90 nm后随着布线的宽度变窄,高纯铜及铜合金靶材的应用成为一个研究热点。本文通过多个专利及相关文献的检索,总结了高纯铜及铜合金靶材的分类,分析了高纯铜的纯度、合金元素的种类以及分布对高纯铜靶材溅射性能的影响,展望了今后大规模集成电路靶材的发展趋势。

Research and Application of High Purity Copper and Copper Alloy Targets in LSI

With the development of large-scale integrated circuit process, a high degree of density, the feature size of the device continues to shrink and the integration level continues to increase. After 90 nm, as the width of the wiring becomes narrower, the application of high-purity copper and copper alloy targets has become a research hotspot. This paper summarizes the classification of high purity copper and copper alloy targets through the retrieval of several patents and related literatures, and analyzes the purity of high purity copper, the types of alloying elements and the influence of distribution on the sputtering performance of high purity copper targets. Looking forward to the future development trend of large-scale integrated circuit targets.