热丝化学气相沉积(HFCVD)在铜箔上制备双层石墨烯薄膜的研究

双层石墨烯独特的物理性能和特性使其在电子领域拥有广阔的应用前景,引起了学者的广泛关注。采用热丝化学气相沉积方法(HFCVD)在1 cm×2 cm的铜箔上制备石墨烯薄膜,并通过探究腔内气压、基体温度、沉积时间、碳源浓度对石墨烯层数和质量的影响,开发出制备低缺陷双层石墨烯的工艺。采用拉曼光谱仪、扫描电子显微镜和原子力显微镜对石墨烯涂层的结构特征、表面形貌和层数进行了表征。实验结果表明,在铜箔上制备出了均匀致密的低缺陷双层石墨烯,厚度为1.5 nm。此外研究结果还表明,降低腔内气压可减少缺陷和层数,增加基体温度可减少层数,沉积时间<4 min或碳源浓度高于1%则无石墨烯生成。因此通过控制腔内气压、基体温度、沉积时间和碳源浓度可实现石墨烯可控生长。

High-quality bilayer graphene synthetized on Cu substrate by HFCVD

Because of its unique physical properties,bilayer graphene has broad application prospects in electronics filed,which has attracted wide attention of scholars. Here,hot-filament chemical vapor deposition method (HFCVD) was usedto deposit graphene on 1 cm×2 cm Cu substrate. The effect of pressure,substrate temperature,deposition time and carbon source concentration on the layers and quality was investigated to deposit bilayer graphene with low defect. Moreover,the surface morphology,microstructure and layer number of graphene were examined by Raman,SEM and AFM. The results show that a dense low-defect bilayer graphene was uniformly covered on Cu with a thickness of 1.5 nm. In addition,decreasing the pressure would reduce defect and layer number,while increasing the substrate temperature would reduce the layer number,and no graphene formed when deposition time was less than 4 min or carbon source concentration was more than 1%. So the growth of graphene could be implemented controllably by controlling gas pressure,substrate temperature,deposition time and carbon source concentration.