| 掺杂Au的ITO介孔材料的共沉淀法制备及气敏性能研究 |
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| 引用本文： | 谢长淮, 沈水发, 潘海波, 薛红涛. 掺杂Au的ITO介孔材料的共沉淀法制备及气敏性能研究[J]. 电子器件, 2009, 32(1) |
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| 作者姓名： | 谢长淮 沈水发 潘海波 薛红涛 |
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| 作者单位： | 福州大学化学化工学院,福州,350108;福州大学化学化工学院,福州,350108;福州大学化学化工学院,福州,350108;福州大学化学化工学院,福州,350108 |
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| 基金项目： | 福建省教育厅资助项目，福建省科技厅项目 |
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| 摘 要： | 采用共沉淀法制备了掺杂Au的ITO(Sn/In=0.6)介孔材料来制备H2敏感器,分析结果表明,制得的ITO(纯和掺杂样品)是菱形晶相,其中掺杂5 mol%Au的样品有较窄的孔分布,其孔径为7～8 nm,用其制作的元件在150 mA工作电流下对H2(10-3)的灵敏度达到40.6,且对CO,NH3选择性较高.响应时间和恢复时间均小于1 min.
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| 关 键 词： | 气敏性 ITO 掺杂 共沉淀法 |
Gas Sensing Properties of Mesoporous ITO Doped with Au Prepared by Co-Precipitation |
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| XIE Chang-huai,SHEN Shui-f,PAN Hai-bo,XUE Hong-tao. Gas Sensing Properties of Mesoporous ITO Doped with Au Prepared by Co-Precipitation[J]. Journal of Electron Devices, 2009, 32(1) |
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| Authors: | XIE Chang-huai SHEN Shui-f PAN Hai-bo XUE Hong-tao |
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| Affiliation: | College of Chemistry and Chemistry Engineering;Fuzhou University;Fuzhou 350108;China |
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| Abstract: | The mesoporous ITO(Sn/In=0.6) doped with Au was prepared through co-precipitation It can be used to make H2 sensor.The ITO(pure and doped) was rhombohedron crystal phase,and the ITO doped with 5 mol%Au had narrow pore distribution,its apertures were about 7-8 nm,and the sensitivity to H2(10-3) reached to 40.6 under 150 mA.and selectivity to CO and NH3 was good.The response and resume time were less than one minute. |
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| Keywords: | ITO |
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